10v drive nch mosfet RCX080N20 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low input capacitance. 3) high esd. ? application switching ? packaging specifications ? inner circuit package bulk code - basic ordering unit (pieces) 500 RCX080N20 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 200 v gate-source voltage v gss ? 30 v continuous i d ? 8a pulsed i dp ? 32 a continuous i s 8a pulsed i sp 32 a avalanche current i as 4.0 a avalanche energy e as 5.17 mj power dissipation p d 40 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25c *3 limited only by maximum channel temperature allowed. *4 t c =25c ? thermal resistance symbol limits unit channel to case rth (ch-c) 3.125 ? c / w * t c =25c * limited only by maximum channel temperature allowed. parameter type source current (body diode) drain current parameter *1 *1 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 )( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 (1) gate (2) drain (3) source ? 1 body diode *2 *2 *3 *4 * (1) (3) (2) ?1 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RCX080N20 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 200 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --10 ? av ds =200v, v gs =0v gate threshold voltage v gs (th) 3.25 - 5.25 v v ds =10v, i d =1ma forward transfer admittance l y fs l 1.8 3.6 - s v ds =10v, i d =4.0a input capacitance c iss - 370 - pf v ds =25v output capacitance c oss - 33 - pf v gs =0v reverse transfer capacitance c rss - 17 - pf f=1mhz turn-on delay time t d(on) - 16 - ns v dd 100v, i d =4.0a rise time t r - 18 - ns v gs =10v turn-off delay time t d(off) - 20 - ns r l =25 ? fall time t f - 10 - ns r g =10 ? total gate charge q g - 9.0 - nc v dd 100v, i d =8a gate-source charge q gs - 3.7 - nc v gs =10v gate-drain charge q gd - 3.7 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =8a, v gs =0v *pulsed conditions m ? parameter static drain-source on-state resistance r ds (on) i d =4.0a, v gs =10v - 470 610 parameter conditions * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX080N20 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs = 10.0 v v gs =6.0v v gs =7.5v v gs =8.0v v gs =6.5v v gs =7.0v t a =25 c pulsed 0.001 0.01 0.1 1 10 0 2 4 6 8 10 drain current : i d [a] gate - source voltage : v gs [v] fig.3 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 gate threshold voltage : v gs(th) [v] channel temperature : t ch [ ] fig.4 gate threshold voltage vs. channel temperature v ds =10v i d =1ma pulsed 10 100 1000 10000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m w ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 -50 -25 0 25 50 75 100 125 150 static drain - source on - state resistance r ds(on) [m w ] channel temperature : t ch [ ] fig.6 static drain - source on - state resistance vs. channel temperature v gs =10v pulsed i d =4.0a i d =8.0a 0 1 2 3 4 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =10.0v v gs =6.0v v gs =6.5v v gs =7.0v v gs =8.0v v gs =7.5v t a =25 c pulsed 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX080N20 0.01 0.1 1 10 0.01 0.1 1 10 forward transfer admittance |yfs| [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source current : i s [a] source - drain voltage : v sd [v] fig.8 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.9 switching characteristics t d(on) t r t d(off) t f v dd P 100v v gs =10v r g =10 w t a =25 c pulsed 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.10 dynamic input characteristics t a =25 c v dd =100v i d =8a pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig.11 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX080N20 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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